Journal
APPLIED PHYSICS LETTERS
Volume 88, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2172707
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It has been shown experimentally that the grain boundaries in aluminium in contact with amorphous silicon are the necessary agents for initiation of the crystallization of silicon upon annealing temperatures as low as 438 K. Thermodynamic analysis has shown (i) that Si can wet the Al grain boundaries due to the favorable Si/Al interface energy as compared to the Al grain-boundary energy and (ii) that Si at the Al grain boundaries can maintain its amorphous state up to a thickness of about 1.0 nm. Beyond that thickness crystalline Si develops at the Al grain boundaries. (c) 2006 American Institute of Physics.
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