Effect of excess plasma on photoelectron spectra of nanoporous GaP

A comparative study of the effect of excess plasma on the photoelectron spectra (PES) of crystalline gallium phosphide (GaP) wafer and nanoporous GaP network samples have been carried out. Rigid shift along with large changes in the line shapes of PES of nanoporous GaP have been observed in the presence of secondary light with respect to spectra measured in its absence. In case of GaP wafer, only rigid shift of PES have been observed. The valence bands offset between nanoporous GaP and GaOx is found 2.30 eV at 300 K. (c) 2006 American Institute of Physics.