Journal
APPLIED PHYSICS LETTERS
Volume 88, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2178470
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ZnO-based p-n homojunctions were grown using molecular-beam epitaxy. Sb and Ga were used as dopants to achieve the p-type and n-type ZnO, respectively. The mesa devices were fabricated by employing wet etching and standard photolithography techniques. Al/Ti metal was deposited by electron-beam evaporation and annealed to form Ohmic contacts. Current-voltage measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained. Very good response to ultraviolet light illumination was observed from photocurrent measurements. (c) 2006 American Institute of Physics.
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