Journal
SOLID STATE COMMUNICATIONS
Volume 137, Issue 10, Pages 566-569Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2005.11.043
Keywords
Bi2VO5.5 thin films; MFS structure; chemical solution decomposition; capacitance-voltage characteristics
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Ferroelectric bismuth vanadate Bi2VO5.5 (BVO) thin films have been successfully grown on p-type Si(100) substrate by using chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The crystalline nature of the films has been studied by X-ray diffraction (XRD). Atomic force microscopy (AFM) was used to study the microstructure of the films. The dielectric properties of the films were studied. The capacitance-voltage characteristics have been studied in metal-ferroelectric-insulator-semiconductor (MFIS) configuration. The dielectric constant of BVO thin films formed on Si(100) is about 146 measured at a frequency of 100 kHz at room temperature. The capacitance-voltage plot of a Bi2VO5.5 MFIS capacitor subjected to a dc polarizing voltages shows a memory window of 1.42 V during a sweep of +/- 5V gate bias. The flatband voltage (V-f) shifts towards the positive direction rather than negative direction. This leads to the asymmetric behavior of the CV curve and decrease in memory window. The oxide trap density at a ramp rate of 0.2 V/s was estimated to be as high as 1.45 x 10(12) cm(-2). (c) 2006 Elsevier Ltd. All rights reserved.
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