Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 45, Issue 3B, Pages 2193-2196Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.45.2193
Keywords
electronic structure; III-V semiconductors; shallow dopants; scanning tunneling microscopy
Categories
Ask authors/readers for more resources
Scanning tunneling spectroscopy (STS) at 8 K is used to study single shallow acceptors embedded near {110}-surfaces ill gallium arsenide (GaAs). At appropriate bias voltages the circularly symmetric contrast normally observed for charged defects evolves into a pronounced triangular shaped protrusion. Comparing dopants at different depths under the surface, we find a linear shift of the associated conductivity maximum along (112) directions. Comparative Studies of Carbon and Zinc acceptors in a modulation-doped heterostructure reveal that both dopants act similarly. The experimental findings Suggest that the highly anisotropic features induced by acceptors resemble a bulk property of the GaAs crystal prominently demonstrating its Ziricblende symmetry.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available