Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 82, Issue 3, Pages 471-474Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-005-3383-1
Keywords
-
Ask authors/readers for more resources
Anti-dot array thin films of bismuth were prepared by the e-beam deposition of this semi-metal on nano-porous substrates. The magneto-resistance measurements of bismuth thin films deposited under identical conditions on various substrates displayed signatures from both classical magneto-resistance and weak anti-localization effects. The relative intensity of the two effects could be altered by the choice of the substrate, with the anti-dot array morphology suppressing the classical magneto-resistance, and enhancing the weak anti-localization contribution to the measured magneto-resistance. As a result, the weak anti-localization effect can be traced to higher magnetic field strengths and higher temperatures than is possible in non-patterned films, improving the accuracy of the parameters extracted from the data.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available