High-temperature operation normal incident 256 x 256 InAs-GaAs quantum-dot infrared photodetector focal plane array

In this letter, a 256 x 256 midwavelength infrared focal plane array (FPA) based on 30-period InAs-GaAs quantum-dot infrared photodetectors (QDIPs) is fabricated. The demonstrated original real-time nonuniformity corrected thermal images of hot soldering iron head with 30-Hz frame rate for the FPA are observed. Without additional light-coupling scheme, the QDIP FPA module is first operated at temperatures higher than 135 K under normal-incident condition with a 30 degrees field of view and f/2 optics. For single device performances, a similar QDIP device with a 30-period InAs-GaAs QD structure is fabricated under the same processing procedure. High specific detectivity D* 1.5 X 10(10) cm (.) Hz(1/2)/W and low noise current density 5.3 X 10(-13) A/Hz(1/2) at applied voltage 0.3 V are observed.