Field-effect transistors with thin films of perylene on SiO2 and polyimide gate insulators

Field-effect transistor (FET) devices have been fabricated with thin films of perylene on SiO2 and polyimide gate insulators, and p-channel FET properties have been found in both FET devices. The perylene FET devices with SiO2 and polyimide gate insulators exhibited field-effect mobility, mu, values of 7.0x10(-3) and 3.7x10(-4) cm(2) V-1 s(-1), respectively, at 300 K under vacuum of 10(-6) Torr. These FET devices were found to operate under atmospheric condition after exposure to air. The mu value increased with increasing temperature from 160 to 280 K, showing a hopping carrier transport. (c) 2006 American Institute of Physics.