Facile method to fabricate a large-scale superhydrophobic surface by galvanic cell reaction

This paper describes the use of galvanic cell reaction as a facile method to chemically deposit Ag nanostructures on the p-silicon wafer on a large scale. When the Ag covered silicon wafer is further modified with a self-assembled monolayer of n-dodecanethiol, a superhydrophobic surface can be obtained with a contact angle of about 154 degrees and a tilt angle lower than 5 degrees.