Carbon nanotube field-effect transistor operation at microwave frequencies

A top-gated carbon nanotube (CNT) field-effect transistor (FET) was fabricated on a quartz substrate. We used a novel measurement approach and demonstrated for the first time frequency-independent performance of a CNT FET for frequencies as high as 23 GHz. This observed maximum operating frequency represents a significant breakthrough in the realization of carbon nanotube-based electronics for high frequency applications. (c) 2006 American Institute of Physics.