Electrical properties of field-effect transistors based on C60 nanowhiskers

We fabricate field-effect transistors (FETs) based on C-60 nanowhiskers (C-60 NWs) and investigate their structural and electrical properties. Thermally annealed C-60 NWs show x-ray powder-diffraction spectra that are consistent with a similar fcc structure to that of C-60 bulk crystals, although with a slightly reduced lattice constant (a=13.9 angstrom). The C-60 NW-FETs exhibit n-channel, normally-on, properties (or FETs) and their carrier mobility is estimated to be 2x10(-2) cm(2)/V s under vacuum conditions at room temperature. (c) 2006 American Institute of Physics.