Journal
APPLIED PHYSICS LETTERS
Volume 88, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2186743
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We report on the application of apertureless THz near-field microscopy for sensing charge carriers in semiconductors. This technique allows for contactless probing of electron concentrations on a micrometer scale. Experimental data and model calculations indicate that as few as about 5000 electrons can be detected in a GaAs structure. (c) 2006 American Institute of Physics.
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