Journal
APPLIED PHYSICS LETTERS
Volume 88, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2185448
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We have characterized the structural and magnetic properties of low-temperature molecular-beam epitaxy grown Ge:Mn by means of high-resolution transmission electron microscopy (HR-TEM), energy dispersive x-ray spectroscopy, and superconducting quantum interference device (SQUID) magnetometry. We find a coherent incorporation of Mn5Ge3 clusters in an epitaxially grown Ge:Mn matrix, which shows the characteristics of a diluted magnetic semiconductor phase of Mn-doped Ge. The clusters are preferentially oriented with the hexagonal [0001] direction parallel to the [001] growth direction of the Ge:Mn matrix, as determined from both HR-TEM and SQUID measurements. (c) 2006 American Institute of Physics.
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