The temperature-dependent electrical transport mechanism of single ZnO nanorods

The electrical transport properties of high quality ZnO nanorods, synthesized by catalyst-free metalorganic chemical vapour deposition, were studied as a function of temperature by fabricating field effect transistors based on single ZnO nanorods. The thermally activated Schottky emission was found to be a ruling transport mechanism in the temperature regime of 70-293 K over a wide range of electric fields with an effective barrier height of similar to 120 mev In contrast, the Fowler-Nordheim tunnelling dominated at low temperatures (< 70 K) under very high electric fields.