XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si

Five atomic percentage Co-doped SnO2 (Sn0.95Co0.05O2) thin films have been deposited on (100) Si substrates by pulsed laser deposition. The Sn0.95Co0.05O2 thin films with rutile-structure on (100) Si substrates could be well deposited under the appreciate deposition parameters. The Sn0.95Co0.05O2 thin film has good room temperature magnetic property with the saturated magnetic moment (m(s)) of 1.3 mu(B)/Co at 293 K. The X-ray photoelectron spectroscopy (XPS) measurements for the Sn0.95Co0.05O2 thin film on Si predicated that Co has oxidation states of +3. The good magnetic property of the Co-doped SnO2 may be deduced the exchange between Co3+ and Co3+ through the oxygen vacancy. (c) 2005 Elsevier B.V. All rights reserved.