Journal
JOURNAL OF APPLIED PHYSICS
Volume 99, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2174125
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The fabrication of crystalline Al-codoped GaN:Mn nanowires with a Mn doping rate of approximately 7 at. % is reported. The magnetism measurements show that the Curie temperature is above 350 K. X-ray and electron diffractions do not show the presence of any secondary magnetic phases. The electrical transport measurement indicates that the nanowires are of n-type semiconductor.
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