4.7 Article

Hysteresis compensation of a porous silicon relative humidity sensor using ANN technique

Journal

SENSORS AND ACTUATORS B-CHEMICAL
Volume 114, Issue 1, Pages 334-343

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2005.05.022

Keywords

humidity sensing; porous silicon humidity sensor; hysteresis effect; compensation of hysteresis effect using ANN; hardware implementation of ANN model

Ask authors/readers for more resources

This paper presents a simple technique based on well-known multilayer perceptron (MLP) neural network with back propagation training algorithm for compensating the significant error due to hysteresis in a porous silicon relative humidity sensor. The porous silicon humidity sensor has been fabricated, and its hysteresis with increasing and decreasing relative humidity has been determined experimentally by a novel phase detection circuit. Simulation studies show that the artificial neural network (ANN) technique can be effectively used to compensate the hysteresis of the porous silicon sensor for relative humidity (%RH) measurement. A hardware implementation scheme of the hysteresis compensating ANN model using a micro-controller is also proposed. Simulation studies show that the maximum error is within +/- 1% of its full-scale value. (c) 2005 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available