4.4 Article

Pulsed electrodeposition of (Bi1-xSbx)2Te3 thermoelectric thin films

Journal

JOURNAL OF APPLIED ELECTROCHEMISTRY
Volume 36, Issue 4, Pages 449-454

Publisher

SPRINGER
DOI: 10.1007/s10800-005-9097-4

Keywords

bismuth antimony telluride; electrodeposition; pulsed technique; thermoelectric properties; thin films

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(Bi1-xSbx)(2)Te-3 thermoelectric thin films were deposited on stainless steel discs in 1 M perchloric acid and 0.1 M tartaric acid by pulse electrodeposition in order to optimize the grain growth. The influence of the electrolyte composition, the cathodic current density and the cathodic pulse time on film stoichiometry were studied. The results show that it is necessary to increase the Sb content in the electrolyte to obtain the (Bi0.25Sb0.75)(2)Te-3 film stoichiometry. Pulse plating reduced the grain size and the roughness, compared with continuous plating. Thermoelectric and electrical properties were also studied and it was found that the Seebeck coefficient and electrical resistivity were related to two parameters: the cathodic pulse current density and the films thickness.

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