4.6 Article

Influence of transistor parameters on the noise margin of organic digital circuits

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 53, Issue 4, Pages 601-610

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2006.870876

Keywords

digital circuit robustness; noise margin; organic thin-film transistors (OTFTs); yield

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The concept of noise margin is crucial in the design and operation of digital logic circuits. Analytical expressions for the transfer curves of an inverter based on two depletion-mode p-type organic thin-film transistors (OTFTs) were calculated. Based on these expressions, the values for the noise margin of organic-based inverters were calculated. In this paper, the influence of the OTFT parameters on the noise margin is presented. Knowing that statistical variations of the transistor parameters are inherent to OTFT technology, these statistical variations are also taken into account. Finally, a circuit yield analysis is presented.

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