Journal
JOURNAL OF APPLIED PHYSICS
Volume 99, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2186376
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We analyze the electrical injection of spin-polarized electrons into a (GaIn)As/GaAs light-emitting diode. Using an Fe/Tb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we demonstrate spin injection even in remanence between 90 and 260 K. The maximum degree of circular polarization of the emitted light is 0.75% at 90 K. (c) 2006 American Institute of Physics.
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