Journal
MICROELECTRONIC ENGINEERING
Volume 83, Issue 4-9, Pages 1563-1566Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2006.01.235
Keywords
nanoparticles; SiGe; memory; wafer bonding; Langmuir-Blodgett deposition; hybrid electronics
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In this communication, we report on the realization of low-temperature processed Electrically Erasable Programmable Read-Only Memory (EEPROM) like device with embedded gold nanoparticles. The realization is based on the fabrication of a V-groove SiGe Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the functionalization of a gate oxide followed by self-assembly of gold nanoparticles and finally, the deposition of an organic insulator by Langmuir-Blodgett (LB) technique. Such structures were processed at a temperature lower than 400 degrees C. The electrical characteristics of the final hybrid Metal Insulator Semiconductor FET (MISFET) memory cells were evaluated in terms of memory window and program/erase voltage pulses. A model describing the memory characteristics, based on the electronic properties of the gate stack materials, is presented. (c) 2006 Elsevier B.V. All rights reserved.
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