A new diamond based heterostructure diode

A diamond based heterostructure diode containing a p-type doped diamond active layer and an n-type doped ultra-nano-crystalline top layer has been investigated. Analysis suggests that the configuration is that of a merged diode, containing two areas of different interfacial barrier potentials in parallel related to the ultra-nano-crystalline grains and the grain boundaries, respectively. Thus this heterostructure may be ideally suited to combine low forward losses with high blocking voltages in diamond high power rectifiers.