Journal
MICROELECTRONIC ENGINEERING
Volume 83, Issue 4-9, Pages 936-939Publisher
ELSEVIER
DOI: 10.1016/j.mee.2006.01.140
Keywords
ion sputtering; nanowire fabrication; ion beam induced deposition; re-deposition; ion beam induced etching
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A software tool (Ionshaperl) has been developed which allows calibrated high precision simulation of ion beam processing. The continuum model is based on a discrete surface element approach that includes first and second-order sputtering and re-deposition in 2D. Atomistic effects are implicitly included by adjusting various simulation parameters to fit atomistic Monte Carlo simulations. Predicted spatial and temporal surface evolution is in good agreement with focused ion beam experiments. (c) 2006 Elsevier B.V. All rights reserved.
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