Journal
IEEE ELECTRON DEVICE LETTERS
Volume 27, Issue 4, Pages 205-207Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.870419
Keywords
aluminum compounds; gallium compounds; high-electron mobility transistors (HEMTs); ion implantation; modulation-doped field-effect transistors (MODFETs); molecular beam epitaxy (MBE)
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This letter reports AlGaN/GaN high-electron mobility transistors with capless activation annealing of implanted Si for nonalloyed ohmic contacts. Source and drain areas were implanted with an Si dose of I x 10(16) cm(-2) and were activated at similar to 1260 degrees C in a metal-organic chemical vapor deposition system in ammonia and nitrogen at atmospheric pressure. Nonalloyed ohmic contacts to ion-implanted devices showed a contact resistance of 0.96 Omega (.) mm to the channel. An output power density of 5 W/mm was measured at 4 GHz, with 58% power-added efficiency and a gain of 11.7 dB at a drain bias of 30 V.
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