Journal
JOURNAL OF APPLIED PHYSICS
Volume 99, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2180532
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A variety of different transmission electron microscopy techniques, and particularly high-angle annular dark-field scanning transmission electron microscopy, has been used to reveal that V defects or inverted hexagonal pyramid defects in multiple InGaN/GaN quantum well (QW) layers nucleate on threading dislocations that cross the InGaN QW. The defects have thin walls lying parallel to {10 (1) over bar1} with the InGaN/GaN QW structure. A formation mechanism for the V defects is proposed taking into account the growth kinetics of GaN and the segregation of In atoms in the strain field around the cores of the threading dislocations.
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