Journal
PHYSICA B-CONDENSED MATTER
Volume 376, Issue -, Pages 647-650Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2005.12.163
Keywords
ZnO; self-interaction correction; dilute magnetic semiconductors; photoemission spectroscopy
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We calculate the electronic structures of ZnO-based dilute magnetic semiconductors within the self-interaction-corrected local density approximation. The results are compared with those calculated within the standard local density approximation. We find the differences in the band gap energy, the energetic position of the Zn 3d bands, and the description of the transition-metal d bands. (c) 2006 Elsevier B.V. All rights reserved.
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