4.4 Article Proceedings Paper

Silicon etch process options for micro- and nanotechnology using inductively coupled plasmas

Journal

MICROELECTRONIC ENGINEERING
Volume 83, Issue 4-9, Pages 1170-1173

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2006.01.079

Keywords

silicon; plasma etching; nanotechnology; ICP

Ask authors/readers for more resources

Silicon is an essential material in the fabrication of a continually expanding range of micro- and nano-scale opto-and microelectronic devices. The fabrication of many such devices requires patterning of the silicon but until recently exploitation of the technology has been restricted by the difficulty of forming the ever-smaller features and higher aspect ratios demanded. Plasma etching through a mask layer is a very useful means for fine-dimension patterning of silicon. In this work, several solutions are presented for the micro- and nano-scale etching of silicon using inductively coupled plasmas ICP. (c) 2006 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available