Journal
APPLIED PHYSICS LETTERS
Volume 88, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2190768
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We report on the buffer/absorber interface formation in highly efficient (14.5%, air mass 1.5) ZnO/CdS/Cu(In,Ga)Se-2 solar cells with a physical vapor deposited CdS buffer. For Se-decapped Cu(In,Ga)Se-2 (CIGSe) absorbers we observe sulfur passivation of the CIGSe grain boundaries during CdS growth and at the interface a thermally stimulated formation of a region with a higher band gap than that of the absorber bulk, determining the height of the potential barrier at the CdS/CIGSe interface. For air-exposed CIGSe samples the grain boundary passivation is impeded by a native oxide/adsorbate layer at the CIGSe surface determining the thermal stability of the potential barrier height. (c) 2006 American Institute of Physics.
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