Journal
APPLIED PHYSICS LETTERS
Volume 88, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2191421
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Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is presented. The highest emission power emitted from a single device reached 0.1 mu W.
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