Fabrication of an organic field-effect transistor on a mica gate dielectric

We fabricated pentacene-based organic field-effect transistors (OFETs) using single-crystalline natural mica substrates as the gate dielectric. Substrate temperatures during the deposition of pentacene films were varied from room temperature (RT) to 90 degrees C. Epitaxial growth of the pentacene film on the mica surface was observed even at RT. The FET working characteristics on the mica gate dielectric have been observed for the first time.