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APPLIED PHYSICS LETTERS
Volume 88, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2197320
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Lateral quantum dots are formed in the two-dimensional electron gases of a high-mobility Si/SiGe heterostructures by means of split Schottky gates. Palladium gates, defined by e-beam lithography and lift-off, show Schottky barriers with very well controlled leakage currents. At low temperatures we observe Coulomb-blockade and stability diamonds on lateral quantum dots containing a total charge of about 25 electrons. The experiments demonstrate that, in contrast to recent reports, Schottky gates are a feasible approach for the fabrication and integration of single electron transistors in the strained Si/SiGe heterosystem. (c) 2006 American Institute of Physics.
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