Time-resolved pump probe of 1.55 μm InAs/InP quantum dots under high resonant excitation

We have performed time-resolved resonant pump-probe experiment to study the dynamic response of InAs/InP quantum dot transitions. A 72-stacked InAs/InP quantum dot layer sample is grown on (311)B substrate. Photoluminescence at high excitation power reveals ground and excited transitions. Carrier radiative lifetimes and differential transmission are determined under strong excitation powers. The variation of measured carrier radiative lifetimes with increasing excitation powers is attributed to the exciton and biexciton lifetimes difference. The implications of such a difference on differential transmission are discussed, and finally exciton and biexciton lifetimes are measured to be about 1720 and 530 ps, respectively. (c) 2006 American Institute of Physics.