Journal
APPLIED SURFACE SCIENCE
Volume 252, Issue 13, Pages 4834-4837Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2005.07.134
Keywords
transparent conducting oxide (TCO); indium tin oxide (ITO); pulsed laser deposition (PLD); rapid thermal annealing (RTA)
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Indium tin oxide (ITO) thin films were prepared by pulsed laser deposition (PLD) on glass substrate at room temperature. Structural, optical, and electrical properties of these films were analyzed in order to investigate its dependence on oxygen pressure, and rapid thermal annealing (RTA) temperature. High quality ITO films with a low resistivity of 3.3 x 10(-4) Omega cm and a transparency above 90% were able to be formed at an oxygen pressure of 2.0 Pa and an RTA temperature of 400 degrees C. A four-point probe method, X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-NIR grating spectrometer are used to investigate the properties of ITO films. (c) 2005 Elsevier B.V. All rights reserved.
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