Active-matrix OLED on bendable metal foil

This brief report; a flexible active-matrix organic light-emitting diode display based on a poly-Si thin-film transistor (TFT) backplane. The p-channel poly-Si TFTs on metal foil exhibited a maximum field-effect mobility of 86.1 cm(2)/Vs, threshold voltage of 3.5 V, gate voltage swing of 0.8 V/dec, and the minimum off current of 10(-12) A/mu m at V-ds = -0.1 V. A 4.1-in active-matrix backplane was fabricated with the poly-Si TFT with a conventional pixel circuit consisting of 2 TFTs and one capacitor. The scan driver circuits with PMOS were integrated on the flexible metal foil. The to emission, organic light emitting display having a brightness of 100 cd/m(2).