Journal
MEASUREMENT TECHNIQUES
Volume 49, Issue 5, Pages 524-528Publisher
CONSULTANTS BUREAU/SPRINGER
DOI: 10.1007/s11018-006-0142-4
Keywords
MOS sensor; gas analyzer; hydrogen; hydrogen sulfide; nitrogen dioxide
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The sensitivity of metal-oxide-semiconductor (MOS) sensors of the Pd-Ta2O5-SiO2-Si type towards hydrogen, hydrogen sulfide and nitrogen dioxide is measured in atmospheres of air, nitrogen, and oxygen. It is demonstrated that MOS sensors are efficient in any chemically noncorrosive gas atmosphere, and also in a vacuum.
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