Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 45, Issue 5A, Pages 3835-3841Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.45.3835
Keywords
spin transfer torque; current induced magnetization switching; magnetic tunnel junction; MgO barrier; magnetoresistive random access memory
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We present a systematic study of spin transfer switching in magnetic tunneling junctions (MTJs). Several ways to decrease the switching current density through material and stack engineering and MTJ element shape optimization are explained in detail. The data are presented for switching on MgO-based MTJ with high tunnel magnetoresistance (TMR) of 150% and low intrinsic switching current density J(c0) of (2-3) x 10(6) A/cm(2). Micromagnetic modeling is used to study the spin transfer switching mechanism in nanosecond regime for spin transfer torque random access memory (ST-F-RAM) pillar. The importance of current-induced Oersted field on the initial onset of precession is discussed.
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