Journal
JOURNAL OF CRYSTAL GROWTH
Volume 290, Issue 2, Pages 334-337Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2006.01.047
Keywords
physical vapor deposition; oxides; semiconducting II-VI materials
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ZnO/MgF2/ZnO sandwich structure films were fabricated. The effects of a buffer layer on structure and optical properties of ZnO films were investigated by X-ray diffraction, photoluminescence, optical transmittance and absorption measurements. Measurement results showed that the buffer layer had the effects of improving the quality of ZnO films and releasing the residual stresses in the films. The near-band edge emissions of ZnO films deposited on the MgF2 buffer layer were significantly enhanced compared with those deposited on bare substrate due to the smaller lattice mismatch between MgF2 and ZnO than that between fused silica and ZnO. (c) 2006 Elsevier B.V. All rights reserved.
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