Journal
OPTICAL MATERIALS
Volume 28, Issue 6-7, Pages 718-722Publisher
ELSEVIER
DOI: 10.1016/j.optmat.2005.09.005
Keywords
rare-earth; luminescence; EXAFS; ab initio theory; Si; GaN
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We review theoretical investigations into the structure and electrical activity of rare-earth dopants in group IV and III-V semiconductors. We find that in Si, rare-earth dopants are electrically active and have a high affinity for complexing with oxygen. In contrast, rare-earth dopants in GaAs and GaN are electrically inactive and require another defect to enable them to act as exciton traps. In further contrast AIN, is distinctive as it possess a deep donor level. The result of complexes of the RE with other defects is discussed along with implications for efficient room temperature luminescence. (c) 2005 Elsevier B.V. All rights reserved.
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