Journal
IEEE ELECTRON DEVICE LETTERS
Volume 27, Issue 5, Pages 360-363Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.872832
Keywords
hafnium dioxide (HfO2); high dielectric-constant dielectric; thin-film transistors (TFTs)
Categories
Ask authors/readers for more resources
High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-kappa (HFO2) gate dielectric is demonstrated for the first time. Because of the high gate capacitance density and thin equivalent-oxide thickness contributed by the high-kappa gate dielectric, excellent device performance can be achieved including high driving current, low subthreshold swing, low threshold voltage, and high ON/OFF current ratio. It should be noted that the O.N-state current of high-kappa. gate-dielectric TFTs is almost five times higher than that of SiO2 gate-dielectric TFTs. Moreover, superior threshold-voltage (V-th) rolloff property is also demonstrated. All of these results suggest that high-kappa gate dielectric is a good choice for high-performance TFTs.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available