Journal
IEEE ELECTRON DEVICE LETTERS
Volume 27, Issue 5, Pages 396-398Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.873422
Keywords
dielectric breakdown; MOSFET; percolation model; percolation resistance; progressive breakdown
Categories
Ask authors/readers for more resources
A method has been developed to determine the effective resistance of a conductive breakdown (BD) path formed in ultrathin gate dielectric. Based on this method, the evolution of the percolation resistance (R-perc) during progressive BD (PBD) is studied in details. It is found that R-perc rapidly degrades in the initial stage of PBD with the rate of 0.1-0.2 dec/s. As PBD continues to evolve, the Rperc degradation drastic-ally slows down, and the parasitic resistance becomes increasingly significant. In the later stage of PBD, R-perc degrades with a very slow rate, leading to the saturation of R-perc. Additionally, the temperature and the voltage dependence of Rperc suggest thal the mechanism responsible in governing the PBD growth under normal operations could be different from that during accelerated stressing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available