Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 246, Issue 1, Pages 90-95Publisher
ELSEVIER
DOI: 10.1016/j.nimb.2005.12.020
Keywords
dielectric films; thin films; high dielectric constant; atomic layer deposition
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Using X-ray absorption spectroscopy we have investigated the local structure of Yb2O3 and Lu2O3 thin films deposited on Si(100) by means of atomic layer deposition. These two oxides, as well as those of the other rare earth elements, are considered among the high dielectric constant materials candidates to substitute SiO2 in ultra-scaled CMOS devices. We find that the films maintain the overall bixbyite structure of the bulk oxides, but exhibit significant distortions of the local structure depending on thickness and thermal treatment. (c) 2006 Elsevier B.V. All rights reserved.
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