Journal
IEEE ELECTRON DEVICE LETTERS
Volume 27, Issue 5, Pages 380-382Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.873380
Keywords
carbon-nanotube field-effect transistor (CNFET); CNFET circuit performance; parasitic fringe capacitance
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Intrinsic carbon-nanotube field-effect transistors (CNFETs) have been shown to have superior performance over silicon transistors. In this letter, we provide an insight how the parasitic fringe capacitance in state-of-the-art CNIFET geometries impacts the overall performance of CNFET circuits. We show that unless the device (gate) width can be significantly reduced, the effective gate capacitance of CNFET will be strongly dominated by the parasitic fringe capacitances, and the superior performance of intrinsic CNFET over silicon MOSFET cannot be achieved in circuit.
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