Oriented growth of p-type transparent conducting Ca-doped SrCu2O2 thin films by pulsed laser deposition

Preparation of p-type transparent conducting Ca-doped SrCu2O2 thin films deposited on a quartz glass substrate has been carried out by a pulsed laser deposition technique. X-ray diffraction patterns illustrate that Ca-doped SrCu2O2 thin films with oriented growth have been obtained at a deposition temperature as low as 350 degrees C. The film deposition at 350 degrees C has a conductivity of 8.2 x 10(-2) S cm(-1), carrier concentration of 1.33 x 10(17) cm(-3), hole mobility of 3.82 cm(2) V-1 s(-1) and a band gap of 3.2 eV at room temperature (300 K). A transparent p-n heterojunction diode was fabricated using p-type SrCu2O2:Ca and n-type ZnO:Al thin films on an ITO-coated glass substrate. The junction exhibits nonlinear and rectifying I-V characteristics.