Journal
IEEE ELECTRON DEVICE LETTERS
Volume 27, Issue 5, Pages 357-359Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.872901
Keywords
advanced structure; excimer laser annealing (ELA); fin; poly-Si; thin-film transistors (TFTs); three-dimensional (3-D)
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The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm(2)/V (.) s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 10(6).
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