Journal
IEEE ELECTRON DEVICE LETTERS
Volume 27, Issue 5, Pages 309-312Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.872918
Keywords
AlGaN/GaN; cantilever; microelectromechanical system (MEMS); piezoresistor; polarization; sensor
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Free-standing GaN and AlGaN/GaN cantilevers have been fabricated on (111) silicon substrate using dry etching. On these cantilevers, a piezoresistor and a high-electron-mobility transistor (HEMT) structure have been realized, and the piezoresponse has been characterized. Cantilever bending experiments resulted in a Young's modulus of approximately 250 GPa, a sensitivity of K similar to 90,and a modulation of the HEMT current of up to 50%. It is seen that the piezoresponse could be related to both the bulk properties and the properties of the heterostructure interface.
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