4.6 Article

Structure and thermal stability of δ-Bi2O3 thin films deposited by reactive sputtering

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 39, Issue 9, Pages 1939-1943

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/39/9/032

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Nanocrystalline delta-Bi2O3 thin films have been deposited onto Si (100) and quartz substrates by reactive sputtering. The structural characteristics and thermal stability of the thin films have been investigated by x-ray diffraction and Raman spectra. It was found that the delta-Bi2O3 thin films could exist stably below 200 degrees C and undergo a phase transition sequence delta -> ss -> alpha with increasing annealing temperature beyond 200 degrees C. These phase transitions were further confirmed by optical constant and optical band gap studies.

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