Journal
APPLIED PHYSICS LETTERS
Volume 88, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2207502
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We have fabricated SrTiO3 (100) single crystal field-effect transistors with amorphous and epitaxial CaHfO3 gate insulator layers. The devices with amorphous insulator layers showed nearly temperature independent behavior. The transistors with epitaxial interfaces exhibited a large improvement over the amorphous devices. The field-effect mobility was found to increase at low temperature, reaching 35 cm(2)/V s at 50 K. This result shows that the carriers accumulated by the field effect on the SrTiO3 side of the gate interface behaved as would be expected for electron-doped SrTiO3. An insulator-metal transition, induced by field-effect doping, was observed in epitaxial SrTiO3-based transistors. (c) 2006 American Institute of Physics.
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