Journal
APPLIED SURFACE SCIENCE
Volume 252, Issue 15, Pages 5594-5597Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2005.12.134
Keywords
ZnO thin films; thermal evaporation; structure; electrical properties
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ZnO thin films were deposited by thermal evaporation of a ZnO powder. The as-deposited films are dark brown, rich zinc and present a low transmittance. Then, these films were annealed in air atmosphere at different temperatures between 100 and 400 degrees C. Their microstructure and composition were studied using XRD and RBS measurements respectively. By increasing the temperature, it was found that film oxidation starts at 250 degrees C. XRD peaks related to ZnO appear and peaks related to Zn decrease. At 300 degrees C, zinc was totally oxidised and the films became totally transparent. The electrical conductivity measurement that were carried out in function of the annealing temperature showed the transition from highly conductive Zn thin film to a lower conductive ZnO thin film. The optical gap (E-g) was deduced from the UV-vis transmittance, and its variation was linked to the formation of ZnO. (c) 2006 Elsevier B.V. All rights reserved.
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