Journal
OPTICS LETTERS
Volume 31, Issue 11, Pages 1591-1593Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.31.001591
Keywords
-
Categories
Ask authors/readers for more resources
Ni/4H-SiC Schottky photodiodes of 5 mm X 5 mm area have been fabricated and characterized. The photodiodes show less than 0.1 pA dark current at -4 V and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and 400 nm has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from 0.14 electrons/photon at 120 nm to 30 electrons/photon at 3 nm. The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be 7.9 eV. (c) 2006 Optical Society of America.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available