Journal
PHYSICAL REVIEW B
Volume 73, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.73.233306
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In amorphous organic semiconductors in which electron or hole transport is due to hopping in an exponential density of states (DOS), the mobility is proportional to n(b), where n is the carrier density and where b increases with increasing width of the DOS. Exact analytical expressions are given for the steady-state and frequency-dependent current density in single-carrier metal/semiconductor/metal devices, based on such materials. For b > 1, the cross over frequency between a conductive and capacitive ac response is shown to be much larger than the inverse steady-state carrier transit time. The relevance to the analysis of the ac small-signal response in small-molecule and polymer layers, such as are used in organic light-emitting devices, is discussed.
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